elektronische bauelemente STT2605 -4.0a, -30v,rds(on) 80m p-channel enhancement mode power mos.fet absolute maximum ratings drain-source voltage gate-source voltage continuous drain current, (note 3) continuous drain current, (note 3) pulsed drain current (note 1) http://www.secosgmbh.com/ any changing of specification will not be informed individual [ description the s tt2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. features * fast switching characteristic * lower gate charge t o t a l p o w e r d i s s i p a t i o n l i n e a r d e r a t i n g f a c t o r o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e * small footprint & low profile package the s tt2605 i s universally used for all commercial-industrial applications. 01 -jun-2002 rev. a page 1 of 4 parameter symbol ratings unit thermal data parameter symbol ratings unit thermal resistance junction-ambient (note 3) a v v a a i d @t a =7 0 /w e c w / e c e c w v ds v gs i d @t a =25 i dm p d @t a =25 tj, tstg rthj-a -3 0 20 -20 -4.0 -3.3 2.0 0.016 -55~+150 62.5 : : : d d g d d s 2605 date code 1 5 2 3 4 6 s g d m i l l i m e t e r m i l l i m e t e r r ef . m i n . m a x . r ef . m i n . m a x . a 1 . 1 0 m a x. l 0 . 4 5 r e f . a1 0 0 . 1 0 l 1 0 . 6 0 r e f . a2 0 . 7 0 1 . 0 0 0 1 0 c 0 . 1 2 r e f . b 0 . 3 0 0 . 5 0 d 2 . 7 0 3 . 1 0 e 0 . 9 5 r e f . e 2 . 6 0 3 . 0 0 e 1 1 . 9 0 r e f . e1 1 . 4 0 1 . 8 0 r o h s c o m p l i a n t p r o d u c t
elektronische bauelemente STT2605 -4.0a, -30v,rds(on) 80m p-channel enhancement mode power mos.fet e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) t o t a l g a t e c h a r g e r d s ( o n ) h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l p a r a m e t e r symbo l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e b r e a k d o w n v o l t a g e t e m p . c o e f f i c i e n t g a t t h e r s h o l d v o l t a g e g a t e - s o u r c e l e a k a g e c u r r e n t d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 5 5 ) g a t e - s o u r c e c h a r g e g a t e - d r a i n ( " m i l l e r " ) c h a r g e t u r n - o n d e l a y t i m e r i s e t i m e t u r n - o f f d e l a y t i m e f a l l t i m e i n p u t c a p a c i t a n c e o u t p u t c a p a c i t a n c e r e v e r s e t r a n s f e r c a p a c i t a n c e b v d s s b v d s / t j v g s ( t h ) i g s s i d s s c r s s q g q g s q g d t d ( o n ) t d ( o f f ) t r c i s s c o s s t f - 3 0 - 0 . 0 2 - 1 . 0 - 3 . 0 1 0 0 - 1 - 2 5 8 0 1 2 0 5 . 5 1 2 . 6 7 6 1 8 4 6 4 0 9 0 3 0 v v / v n a u a u a m n c n s p f [ v g s = 0 v v d s = - 2 5 v f = 1 . 0 m h z v d d = - 1 5 v i d = - 1 a v g s = - 1 0 v r g = 3 . 3 r d = 1 5 [ [ i d = - 4 . 0 a v d s = - 2 4 v v g s = - 4 . 5 v v g s = - 1 0 v , i d = - 4 . 0 a v g s = - 4 . 5 v , i d = - 3 . 0 a v g s = 0 v , i d = - 2 5 0 u a v g s = 2 0 v v d s = - 3 0 v , v g s = 0 v d s = - 2 4 v , v g s = 0 v d s = v g s , i d = - 2 5 0 u a r e f e r e n c e t o 2 5 , i d = - 1 m a _ _ _ s o u r c e - d r a i n d i o d e _ _ _ _ _ _ _ p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t f o r w a r d o n v o l t a g e v d s _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ i s = - 1 . 6 a , v g s = 0 v . v - 1 . 2 n o t e s : 1 . p u l s e w i d t h l i m i t e d b y s a f e o p e r a t i n g a r e a . 2 . p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . 2 f o r w a r d t r a n s c o n d u c t a n c e g f s s 6 v d s = - 5 v , i d = - 4 . 0 a _ _ _ 4 0 0 8 . 8 r e v e r s e r e c o v e r y t i m e r e v e r s e r e c o v e r y c h a r g e i s = - 4 . 0 a , v g s = 0 v _ _ _ _ t r r q r r n c n s 2 1 1 4 _ d l / d t = 1 0 0 a / u s o c o c o c o c o 2 2 2 2 ?? ?? [ 01-jun-2002 rev. a page 2 of 4 3.surface mounted on 1 in 2 copper pad of fr4 board; 156 o c/w when mounted on min. copper pad.
elektronische bauelemente STT2605 -4.0a -30v,rds(on) 80m p-channel enhancement mode power mos.fet [ 01-jun-2002 rev. a page 3 of 4 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 6. gate threshold voltage v.s. junction temperature fig 5. forward characteristics of reverse diode http://www.secosgmbh.com/ any changing of specification will not be informed individual c h a r a c t e r i s t i c s c u r v e
elektronische bauelemente STT2605 -4.0a, -30v,rds(on) 80m p-channel enhancement mode power mos.fet [ 01-jun-2002 rev. a page 4 of 4 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 11. switching time waveform fig 12. gate charge waveform http://www.secosgmbh.com/ any changing of specification will not be informed individual
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